Absolute Intensities of the Vacuum Ultraviolet Spectra in a Metal-Etch Plasma Processing Discharge
Absolute Intensities of the Vacuum Ultraviolet Spectra in a Metal-Etch Plasma Processing Discharge
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金属蚀刻等离子体加工放电中真空紫外光谱的绝对强度
DOI：
10.1116/1.582044
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
B. Aragon
中科院分区：
文献类型：
--
作者：
J. Woodworth;M. Riley;V. A. Amatucci;T. W. Hamilton;B. Aragon
本文报道了电感耦合等离子体反应器中铝腐蚀放电的真空紫外和近紫外发射线（4.8 eV至18 eV）的绝对强度。我们报告线强度作为晶圆类型，压力，气体混合物和射频激发水平的函数。IrI是一种含有C12和BC 13的标准铝蚀刻混合物，几乎所有能量超过8.8 eV的光都是由中性原子氯发出的。在放电中的WV辐射的光学捕获使到晶片的VUV通量的计算复杂化。然而，我们看到在高于8.8eV的能量下，对于非反应性晶片，到达壁的总光子通量为4 × 1014光子/cm 2秒的数量级，而对于反应性晶片，到达壁的总光子通量为0.7 × 1014光子/cm 2秒的数量级。观察到的辐射的大部分在8.9和9.3 eV之间。在这些能量下，光子具有足够的能量以在SiO2中产生电子-空穴对，但是在被吸收之前可以穿透到SiO2中高达一微米。这些测量的相关性真空W光子诱导损伤的SiO2在蚀刻过程中进行了讨论。
In this paper we report absolute intensities of vacuum ultraviolet and near ultraviolet emission lines (4.8 eV to 18 eV ) for aluminum etching discharges in an inductively coupled plasma reactor. We report line intensities as a function of wafer type, pressure, gas mixture and rf excitation level. IrI a standard aluminum etching mixture containing C12 and BC13 almost all the light emitted at energies exceeding 8.8 eV was due to neutral atomic chlorine. Optical trapping of the WV radiation in the discharge complicates calculations of VUV fluxes to the wafer. However, we see total photon fluxes to the wailer at energies above 8.8 eV on the order of 4 x 1014 photons/cm2sec with anon- reactive wafer and 0.7 x 10 `4 photons/cm2sec with a reactive wtier. The maj ority of the radiation observed was between 8.9 and 9.3 eV. At these energies, the photons have enough energy to create electron-hole pairs in Si02, but may penetrate up to a micron into the Si02 before being absorbed. Relevance of these measurements to vacuum-W photon-induced darnage of Si02 during etching is discussed.