Cathodoluminescence nano-characterization of semiconductors
Cathodoluminescence nano-characterization of semiconductors
复制标题
DOI：
10.1088/0268-1242/26/6/064005
复制
发表时间：
2011-06-01
影响因子：
1.9
通讯作者：
Martin, Robert W.
中科院分区：
文献类型：
--
作者：
Edwards, Paul R.;Martin, Robert W.
本文综述了阴极发光（CL）在扫描电子显微镜（SEM）中用于半导体材料和器件的纳米级表征的应用。我们讨论了测量的技术方面，如限制空间分辨率的因素和高效收集光学系统的设计考虑。概述了该技术的最新发展的优点，包括使用高光谱成像模式和CL和其他基于SEM的测量的组合。我们说明了这些点，从我们自己的经验，设计和构建CL系统和应用技术的III族氮化物材料和纳米结构的表征的例子。
We give an overview of the use of cathodoluminescence (CL) in scanning electron microscopy (SEM) for the nano-scale characterization of semiconducting materials and devices. We discuss the technical aspects of the measurement, such as factors limiting the spatial resolution and design considerations for efficient collection optics. The advantages of more recent developments in the technique are outlined, including the use of the hyperspectral imaging mode and the combination of CL and other SEM-based measurements. We illustrate these points with examples from our own experience of designing and constructing CL systems and applying the technique to the characterization of III-nitride materials and nanostructures.