Radiation response of fully-depleted MOS transistors fabricated in SIMOX
Radiation response of fully-depleted MOS transistors fabricated in SIMOX
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DOI：
10.1109/23.340582
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发表时间：
1994-12
影响因子：
1.8
通讯作者：
W. Jenkins;S. T. Liu
中科院分区：
文献类型：
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作者：
W. Jenkins;S. T. Liu
研究了用SIMOX制备的耐辐射全耗尽亚微米n-MOS和p-MOS晶体管的总剂量辐射响应。讨论了三种不同辐照偏置条件下总电离剂量辐射引起的阈值电压偏移，包括最坏情况（通栅）偏置。实验证明了总剂量硬耗尽p-MOS晶体管。在电离辐射环境中，与部分耗尽的n-MOS晶体管相比，完全耗尽的n-MOS晶体管的阈值电压位移更大，这可以通过将辐射诱导的埋藏氧化物电荷耦合到顶部晶体管的模型来解释。>
The total dose radiation response of radiation-resistant fully-depleted submicron n-MOS and p-MOS transistors fabricated in SIMOX is presented. The total ionizing dose radiation induced threshold voltage shifts under three different irradiation bias conditions, including the worst case (pass-gate) bias for n-MOS transistors are discussed. Total dose hard fully-depleted p-MOS transistors are experimentally demonstrated. The larger threshold voltage shifts of fully-depleted n-MOS transistors as compared to partially-depleted n-MOS transistors in an ionizing radiation environment are explained by a model coupling the radiation induced buried oxide charge to the top transistor. >