Comparison of blue and green InGaN/GaN multiple-quantum-well light-emitting diodes grown by metalorganic vapor phase epitaxy
Comparison of blue and green InGaN/GaN multiple-quantum-well light-emitting diodes grown by metalorganic vapor phase epitaxy
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DOI：
10.1063/1.1866634
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发表时间：
2005-03-07
影响因子：
4
通讯作者：
Lau, KM
中科院分区：
文献类型：
--
作者：
Qi, YD;Liang, H;Lau, KM
采用金属有机物气相外延技术在蓝宝石衬底上生长了InGaN/GaN多量子阱蓝光和绿光发光二极管。高分辨率透射显微镜显示，一个更大的堆垛层错密度存在于量子阱区的蓝色LED比在绿色LED。在绿色LED中，在较大的驱动电流下，电致发光（EL）发射能量的蓝移比在蓝色LED中更突出，这是由蓝色和绿色多量子阱中不同应变弛豫尺度的不同压电场强度导致的量子限制斯塔克效应的不同强度解释的。随着驱动电流的增加，蓝光和绿色LED的高能量一侧的EL发射能量线宽都逐渐变宽，这是由于能带填充效应引起的。(c)2005年美国物理学会。
InGaN/GaN multiple-quantum-well (MQW) blue and green-light-emitting diodes (LEDs) were grown on sapphire substrates using metalorganic vapor phase epitaxy. High-resolution transmission microscopy shows that a much larger density of stacking faults exist in the quantum-well region of the blue LEDs than in the green LEDs. In the green LEDs, the blueshift in the electroluminescence (EL) emission energy at larger driving currents is more prominent than in the blue LEDs, which is explained by different strength of quantum confined Stark effect as a result of different piezoelectric field intensity by different scales of strain relaxation in the blue and green MQWs. The steady broadening of the EL emission energy linewidth on the higher energy side with the increase of the driving current was observed in both blue and green LEDs, which is attributed to the band filling effect. (c) 2005 American Institute of Physics.