Electromigration in 3D-IC scale Cu/Sn/Cu solder joints
Electromigration in 3D-IC scale Cu/Sn/Cu solder joints
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DOI：
10.1016/j.jallcom.2016.03.134
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发表时间：
2016-08
影响因子：
6.2
通讯作者：
C.E. Ho;P. T. Lee;Chih Chen;Cheng-Hsien Yang
中科院分区：
文献类型：
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作者：
C.E. Ho;P. T. Lee;Chih Chen;Cheng-Hsien Yang
利用场发射扫描电子显微镜（FE-SEM）结合电子背散射衍射（EBSD）分析系统研究了Cu/Sn（25-50 μm）/Cu结构三维集成电路（3D-IC）焊点的电迁移效应。几天的电子电流应力引起的Cu 6Sn 5在特定的锡晶界（GB）的显着积累。EBSD分析表明，β-Sn晶向和GB晶向在这种富集中起主导作用。Cu 6Sn 5积累对上述两个因素的依赖性（即，基于亨廷顿和Grone的电迁移理论，结合β-Sn晶格中Cu的各向异性扩散数据，提出了一个数学模型，可以很好地解释β-Sn晶格中Cu的各向异性扩散（Sn晶粒取向和GB取向）。
The electromigration effect on the three-dimensional integrated circuits (3D-IC) scale solder joints with a Cu/Sn(25–50 μm)/Cu configuration was investigated using a field-emission scanning electron microscope (FE–SEM) combined with electron backscatter diffraction (EBSD) analysis system. Electron current stressing for a few days caused the pronounced accumulation of Cu6Sn5in specific Sn grain boundaries (GBs). The EBSD analysis indicated that both the β-Sn crystallographic orientation and GB orientation play dominant roles in this accumulation. The dependencies of the Cu6Sn5accumulation on the two above factors (i.e., Sn grain orientation and GB orientation) can be well rationalized via a proposed mathematic model based on the Huntington and Grone's electromigration theory with the Cu anisotropic diffusion data in a β-Sn lattice.