Soft Error Rates in 65nm SRAMs--Analysis of new Phenomena
Soft Error Rates in 65nm SRAMs--Analysis of new Phenomena
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65nm SRAM中的软错误率--新现象分析
DOI：
10.1109/iolts.2007.60
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
G. Georgakos
中科院分区：
文献类型：
--
作者：
Franz X. Ruckerbauer;G. Georgakos
在65 nm CMOS工艺的嵌入式SRAM上测量的软错误率显示出中子辐射（NSER）引起的错误率的显着增加，而由于α辐射（ASER）的软错误的数量在预期范围内。在本文中，它将被讨论，NSER值的增加是由一个意想不到的单粒子翻转（SEU），同时翻转多个SRAM单元（多位翻转）的高数量造成的。作为根本原因，辐射引起的寄生双极晶体管的开关被发现。
Soft error rates measured on embedded SRAMs in a 65 nm CMOS technology show a significant increase of the error rate induced by neutron radiation (NSER), while the number of soft errors due to alpha radiation (ASER) is within the expected range. In this paper it will be discussed, that the increase of the NSER values is caused by an unexpected high number of single event upsets (SEU) that flip multiple SRAM cells simultaneously (multi-bit upset). As root cause radiation induced switching of parasitic bipolar transistors was found.