ISOTROPIC MAGNETORESISTANCE OF ICOSAHEDRAL AL-PD-MN
ISOTROPIC MAGNETORESISTANCE OF ICOSAHEDRAL AL-PD-MN
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二十面体 AL-PD-MN 的各向同性磁阻
DOI：
10.1103/physrevb.60.7208
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发表时间：
1999
影响因子：
3.7
通讯作者：
Ö. Rapp
中科院分区：
文献类型：
--
作者：
M. Rodmar;B. Grushko;N. Tamura;K. Urban;Ö. Rapp
本文研究了高质量单晶中二十面体Al-Pd-Mn的电阻率r（T）和磁阻Dr（B，T）/r（0，T）沿沿着二次和五次对称方向的温度关系。为了控制任何磁贡献的影响，从晶体的横向和轴向极端的样品被测量沿着两重和五重对称方向。电阻率和磁阻的温度依赖性被发现是各向同性的。r（T）和Dr（B，T）/r（0，T）沿晶锭横向随机变化，沿着晶锭生长方向系统变化。这些观察结果可以定性地与晶体生长方向上低于0.2%/cm 2的Mn浓度梯度相关。@S0163-1829 ~99！10433-8#
The temperature dependence of the electrical resistivity r(T) and the magnetoresistance Dr(B,T)/r(0,T) have been studied along the twofold and fivefold symmetry directions of an icosahedral Al-Pd-Mn in a high quality monograin crystal. To control the influence of any magnetic contribution, samples from the transversal and axial extremes of the crystal were measured along both the twofold and fivefold symmetry directions. The temperature dependence of the resistivity and the magnetoresistance were found to be isotropic. r(T) and Dr(B,T)/r(0,T) varied in a random way in the transversal direction of the ingot, while systematic variations were observed along the growth direction. These observations could be qualitatively correlated to a gradient of the Mn concentration of below 0.2%/cm in the growth direction of the crystal. @S0163-1829 ~99!10433-8#