Different current conduction mechanisms through thin high-k HfxTiySizO films due to the varying Hf to Ti ratio
Different current conduction mechanisms through thin high-k HfxTiySizO films due to the varying Hf to Ti ratio
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DOI：
10.1063/1.1702101
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发表时间：
2004-05-15
影响因子：
3.2
通讯作者：
Zürcher, S
中科院分区：
文献类型：
--
作者：
Paskaleva, A;Bauer, AJ;Zürcher, S
研究了不同Hf：Ti比的高介电常数(HfxTiySizO)薄膜的电学行为。薄膜由金属有机化学气相沉积制备，使用两种单一来源的前驱体的混合物。氧化物和界面电荷、漏电流和导电机制被发现是薄膜成分的强大功能。Hf含量小于10at的薄膜。%表现出较低的氧化物水平和界面电荷，较高的介电常数，而HF含量高于15at。%具有更好的漏电流特性。一个强有力的证据是，在HF含量低于10at的薄膜中。导电过程受声子辅助隧穿的控制，即它是由材料的本征性质决定的，而不是由它的缺陷结构决定的。(C)2004年美国物理研究所。
We have investigated the electrical behavior of high permittivity (high-k) hafnium-titanium-silicate (HfxTiySizO) layers with different Hf:Ti ratios in the films. The films are prepared by metalorganic chemical vapor deposition using a mixture of two single source precursors. Oxide and interface charges, leakage currents and conduction mechanisms are found to be a strong function of the film composition. The films with Hf content less than 10 at. % show lower levels of oxide and interface charges and higher dielectric constant whereas those with Hf content higher than 15 at. % have better leakage current properties. A strong evidence is presented that in films with Hf content lower than 10 at. % the conduction process is governed by a phonon-assisted tunneling, i.e., it is defined rather by the intrinsic properties of the material than by its defect structure. (C) 2004 American Institute of Physics.