Optical band gap dependence on composition and thickness of InxGa1−xN (0
Optical band gap dependence on composition and thickness of InxGa1−xN (0
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光学带隙与 InxGa1−xN 的成分和厚度的关系（0
DOI：
10.1063/1.125079
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发表时间：
1999
影响因子：
4
通讯作者：
L. Robins
中科院分区：
文献类型：
--
作者：
C. A. Parker;J. Roberts;S. Bedair;M. J. Reed;S. X. Liu;N. El;L. Robins
在应变和松弛的x<；0.25InxGa1−xN外延层中进行了带隙测量。用弛豫薄膜的X射线衍射法测定了x值。通过透过率测量，发现最低能量吸收阈值出现在与光致发光光谱峰值相同的能量处。应变和松弛薄膜的弯曲参数分别为3.42 eV和4.11 eV。给出了带隙移位Δ等随应变的变化关系。
Band gap measurements have been carried out in strained and relaxed InxGa1−xN epilayers with x<0.25. Values of x were determined from x-ray diffraction of relaxed films. The lowest energy absorption threshold, measured by transmittance, was found to occur at the same energy as the peak of the photoluminescence spectrum. Bowing parameters for both strained and relaxed films were determined to be 3.42 and 4.11 eV, respectively. The dependence of the band gap shift, ΔEg, on strain is presented.