Electronic and transport properties of T-graphene nanoribbon: Symmetry-dependent multiple Dirac points, negative differential resistance and linear current-bias characteristics
Electronic and transport properties of T-graphene nanoribbon: Symmetry-dependent multiple Dirac points, negative differential resistance and linear current-bias characteristics
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T-石墨烯纳米带的电子和输运特性:对称性多狄拉克点、负微分电阻和线性电流偏置特性
DOI:
10.1209/0295-5075/107/37004
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发表时间:
2014-08-01
期刊:
影响因子:
1.8
通讯作者:
Guo, Y. D.
中科院分区:
文献类型:
--
作者:
Dai, C. J.;Yan, X. H.;Guo, Y. D.
Based on the tight-binding method and density functional theory, band structures and transport properties of T-graphene nanoribbons are investigated. By constructing and solving the tight-binding Hamiltonian, we derived the analytic expressions of the linear dispersion relation and Fermi velocity of Dirac-like fermions for armchair T-graphene nanoribbons. Multiple Dirac points, which are triggered by the mirror symmetry of armchair T-graphene nanoribbons, are observed. The number and positions of multiple Dirac points can be well explained by our analytic expressions. Tight-binding results are confirmed by the results from density functional calculations. Moreover, armchair T-graphene nanoribbons exhibit negative differential resistance, whereas zigzag T-graphene nanoribbons have linear current-bias voltage characteristics near the Fermi level.