Lateral spreads of ion-implanted Al and P atoms in silicon carbide
Lateral spreads of ion-implanted Al and P atoms in silicon carbide
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DOI：
10.35848/1347-4065/abf13d
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发表时间：
2021-05-01
影响因子：
1.5
通讯作者：
Kimoto, Tsunenobu
中科院分区：
文献类型：
--
作者：
Jin, Qimin;Nakajima, Masashi;Kimoto, Tsunenobu
实验研究了Al和P原子注入高纯半绝缘4 H碳化硅（SiC）衬底（10 keV，相当于700 keV）后的横向扩展。扫描电容显微镜观察发现，横向分布高度依赖于离子注入能量。沿[11（2）over bar 0]方向观察到沿着不对称的横向分布，这可能归因于衬底的4度偏角。沿[1100]方向的横向扩展被确定为Al原子为0.33 μ m，P原子为0.38 +/-0.02 μ m，沿着[11（2）over bar 0]方向（阶跃流的上游/下游侧）的横向扩展被确定为Al原子为0.28 μ m/0.38 μ m，P原子为0.25 μ m/0.40 μ m。比较了Al和P原子在SiC中的横向扩散，讨论了Al和P在SiC中的阻止本领和范围。(c)2021日本应用物理学会
Lateral spreads of Al and P atoms implanted (10 similar to 700 keV) into a high-purity semi-insulating 4H silicon carbide (SiC) substrate have been experimentally investigated. Scanning capacitance microscopy observation revealed that lateral distributions are highly dependent on the implantation energies of ions. Asymmetric lateral distributions were observed along the [11 (2) over bar0] direction, which may be attributed to the 4 degrees off-angle of the substrate. The lateral spreads are determined to be 0.33 mu m for Al atoms, 0.38 +/- 0.02 mu m for P atoms along the [1100] direction, and 0.28 mu m/0.38 mu m for Al atoms, 0.25 mu m/0.40 mu m for P atoms along the [11 (2) over bar0] direction (upstream/downstream side of step flow). Comparison between the lateral spreads of Al and P atoms is discussed with Al and P stopping powers and ranges in SiC. (c) 2021 The Japan Society of Applied Physics