Integrated nanotube circuits: Controlled growth and ohmic contacting of single-walled carbon nanotubes
Integrated nanotube circuits: Controlled growth and ohmic contacting of single-walled carbon nanotubes
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DOI：
10.1063/1.124462
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发表时间：
1999-08-02
影响因子：
4
通讯作者：
Dai, HJ
中科院分区：
文献类型：
--
作者：
Soh, HT;Quate, CF;Dai, HJ
单壁碳纳米管的合成是通过化学气相沉积甲烷在基板上的控制位置使用图案化的催化岛。本文提出的合成和微加工相结合的技术允许将大量具有可控长度的欧姆接触纳米管器件放置在单个衬底上。运输研究表明欧姆接触，使两端电阻低至20 k Ω，在低温下。(C)1999年美国物理学会。[S0003-6951（99）01331-5]。
Single-walled carbon nanotubes are synthesized by chemical vapor deposition of methane at controlled locations on a substrate using patterned catalytic islands. The combined synthesis and microfabrication technique presented here allows a large number of ohmically contacted nanotube devices with controllable length to be placed on a single substrate. Transport studies demonstrate ohmic contacting, giving two-terminal resistances as low as 20 k Omega at low temperatures. (C) 1999 American Institute of Physics. [S0003-6951(99)01331-5].