On combining surface and bulk passivation of SiN/sub x/:H layers for mc-Si solar cells
On combining surface and bulk passivation of SiN/sub x/:H layers for mc-Si solar cells
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DOI：
10.1109/pvsc.2002.1190480
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发表时间：
2002-05
期刊：
影响因子：
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通讯作者：
W. Soppe;J. Hong;W. Kessels;M. V. D. van de Sanden;W. Arnoldbik;H. Schlemm;C. Devilée;H. Rieffe-H.-Rief
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文献类型：
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作者：
W. Soppe;J. Hong;W. Kessels;M. V. D. van de Sanden;W. Arnoldbik;H. Schlemm;C. Devilée;H. Rieffe-H.-Rief
一条路线，其次是ECN，描述了微波（MW）PECVD沉积的SiN/sub x/：H层，这是适合于表面和体钝化的mc-Si太阳能电池的发展。第一项研究集中在表面钝化上，这导致了富含Si的SiN层的发展，其中氢主要与硅原子结合。这种富Si层的缺点是它们在较短波长下的大吸收，这使得它们不适合作为正面AR涂层。此外，这些层似乎不太适合本体钝化。因此，下一步是开发用于体钝化的SiN层。为了通过SiN层的热退火获得良好的太阳能电池体钝化，我们发现需要具有高N-H键合浓度的SiN层。这些层的沉积条件的微调，最终导致SiN层类型的发展，其结合了三个所需的性质：低吸收（良好的反射涂层），良好的表面钝化（在FZ晶片上的S/sub eff/小于50 cm/s）和良好的体钝化。
A route, as followed by ECN, is described for development of SiN/sub x/:H layers deposited by microwave (MW) PECVD, which are suited for surface and bulk passivation of mc-Si solar cells. First research was focussed on surface passivation and this resulted in the development of SiN layers that were Si-rich and where the hydrogen is mainly bonded to silicon atoms. A disadvantage of such Si-rich layers is their large absorption at shorter wavelengths, which make them unsuitable as front side AR coatings. Further, these layers appeared to be less suitable for bulk passivation. The next step therefore was the development of SiN layers for bulk passivation. For good bulk passivation of solar cells by means of a thermal anneal of the SiN layers, we found that SiN layers with high N-H bonding concentrations are required. Fine-tuning of the deposition conditions of these layers, finally resulted in the development of a SiN layer type which combines the three desired properties: low absorption (good antireflection coating), good surface passivation (S/sub eff/ on FZ wafers less than 50 cm/s) and good bulk passivation.