Dry-Etching Processes for High-Aspect-Ratio Features with Sub-10 nm Resolution High-χ Block Copolymers.
Dry-Etching Processes for High-Aspect-Ratio Features with Sub-10 nm Resolution High-χ Block Copolymers.
复制标题
使用亚 10 nm 分辨率的高 χ 嵌段共聚物进行高纵横比特征的干法蚀刻工艺。
DOI：
10.1021/acsami.1c13503
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发表时间：
2021
影响因子：
9.5
通讯作者：
M. Zelsmann
中科院分区：
文献类型：
--
作者：
Gwenaelle Pound;P. Bézard;C. Petit;S. Cavalaglio;G. Cunge;Benjamin Cabannes;G. Fleury;X. Chevalier;M. Zelsmann
嵌段共聚物的定向自组装是一种非常有吸引力的实现高分辨率功能纳米结构的技术。在这项工作中，我们开发了完整的干蚀刻策略BCP纳米光刻使用18纳米间距层状含硅嵌段共聚物。氧化性Ar/O2等离子体和非氧化性H2/N2等离子体都被用来去除我们的BCP堆的顶涂层材料，并显示垂直层状结构。在Ar/O2等离子体下，界面层在顶涂层/BCP界面处停止蚀刻过程，这提供了蚀刻停止，但也需要额外的基于CF 4的穿透等离子体用于进一步蚀刻。该界面层不存在于H2/N2中。增加H2/N2比率导致含硅薄层的更深刻的修改，其中He/N2/O2而不是Ar/O2等离子体中的化学产生更平滑和更规则的光刻掩模。最后，这些特征被成功地转移到硅、绝缘体上硅和氮化硅衬底中。这项工作突出了在18 nm间距的含硅嵌段共聚物的性能，图案相关的硬掩模材料的各种应用，包括微电子。
Directed self-assembly of block copolymers (BCP) is a very attractive technique for the realization of functional nanostructures at high resolution. In this work, we developed full dry-etching strategies for BCP nanolithography using an 18 nm pitch lamellar silicon-containing block copolymer. Both an oxidizing Ar/O2 plasma and a nonoxidizing H2/N2 plasma are used to remove the topcoat material of our BCP stack and reveal the perpendicular lamellae. Under Ar/O2 plasma, an interfacial layer stops the etch process at the topcoat/BCP interface, which provides an etch-stop but also requires an additional CF4-based breakthrough plasma for further etching. This interfacial layer is not present in H2/N2. Increasing the H2/N2 ratio leads to more profound modifications of the silicon-containing lamellae, for which a chemistry in He/N2/O2 rather than Ar/O2 plasma produces a smoother and more regular lithographic mask. Finally, these features are successfully transferred into silicon, silicon-on-insulator, and silicon nitride substrates. This work highlights the performance of a silicon-containing block copolymer at 18 nm pitch to pattern relevant hard-mask materials for various applications, including microelectronics.
光子自吸收对低压等离子体中 VUV 发射光谱和 TDLAS 测定 H (n = 2) 密度的作用
影响因子：
3.8
作者：
F. Merk;R. Friedl;S. Briefi;C. Fröhler-Bachus;U. Fantz
通讯作者：
U. Fantz