Effect of Annealing Temperature and Ambient on Formation, Composition and Bandgap of Cu_2ZnSnS_4 Thin Films
Effect of Annealing Temperature and Ambient on Formation, Composition and Bandgap of Cu_2ZnSnS_4 Thin Films
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DOI：
10.12693/aphyspola.126.751
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发表时间：
2014-08
影响因子：
0.7
通讯作者：
Y. Sun;B. Yao;X. Meng;Dan Wang;D. Long;Z. Hua
中科院分区：
文献类型：
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作者：
Y. Sun;B. Yao;X. Meng;Dan Wang;D. Long;Z. Hua
Cu_2ZnSnS_4薄膜的成分和带隙太阳，B。Yao，X.C. Meng，L. Wang，中国山杨D.朗，Z.吉林大学物理学院，超硬材料国家重点实验室，长春130023。吉林大学物理学院先进电池物理与技术教育部重点实验室，长春，130012;吉林师范大学功能材料物理与化学教育部重点实验室，四平，136000。中国
Composition and Bandgap of Cu2ZnSnS4 Thin Films Y.M. Sun, B. Yao, X.C. Meng, D. Wang, D. Long, Z. Hua State Key Lab of Superhard Material and College of Physics, Jilin University, Changchun 130023, P.R. China Key Laboratory of Physics and Technology for Advanced Batteries of Ministry of Education, College of Physics, Jilin University, Changchun, 130012, China Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Siping 136000, P.R. China