Spin-injection device based on EuS magnetic tunnel barriers
Spin-injection device based on EuS magnetic tunnel barriers
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DOI：
10.1063/1.1503406
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发表时间：
2002-09-02
影响因子：
4
通讯作者：
de Jonge, WJM
中科院分区：
文献类型：
--
作者：
Filip, AT;LeClair, P;de Jonge, WJM
我们提出了一种自旋阀器件组成的一个半导体量子阱，夹在铁磁半导体层，作为障碍。通过这种三层的总电导取决于两个铁磁势垒层的相对磁化强度，这两个铁磁势垒层充当“自旋过滤器”。“就实际实现而言，EuS/PbS异质结构可能是合适的候选者。对于量子阱和铁磁阻挡层的厚度在很大范围内，磁电阻都应该超过100%。从基础物理学的角度来看，该器件不仅可以洞察量子阱层的自旋寿命，而且量子阱中发生的强自旋积累可能会导致新的光学和核磁共振特性。(C)2002年美国物理学会。
We propose a spin-valve device consisting of a nonmagnetic semiconductor quantum well, sandwiched between ferromagnetic semiconductor layers that act as barriers. The total conductance through such a trilayer depends on the relative magnetization of the two ferromagnetic-barrier layers which act as "spin filters." With respect to practical realization, EuS/PbS heterostructures may be a suitable candidate. The magnetoresistance should exceed 100% for a wide range of the thicknesses of both the quantum well and the ferromagnetic barriers. From a fundamental physics point of view, the device may not only give insight into the spin lifetimes of the nonmagnetic layer, but the strong spin accumulation taking place in the quantum well may lead to novel optical and nuclear magnetic resonance properties. (C) 2002 American Institute of Physics.