Itinerant helimagnetic single-crystalline MnSi nanowires.
Itinerant helimagnetic single-crystalline MnSi nanowires.
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DOI：
10.1021/nn901653q
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发表时间：
2010-04
期刊：
影响因子：
17.1
通讯作者：
Kwanyong Seo;Hana Yoon;Seong-Wan Ryu;Sunghun Lee;Y. Jo;M. Jung;JinHee Kim;Yang-Kyu Choi;Bongsoo Kim
中科院分区：
文献类型：
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作者：
Kwanyong Seo;Hana Yoon;Seong-Wan Ryu;Sunghun Lee;Y. Jo;M. Jung;JinHee Kim;Yang-Kyu Choi;Bongsoo Kim
我们报道了在没有催化剂的情况下，通过气相输运法合成了独立的MnSi纳米线，并首次测量了它们的电性能和磁性能。单晶MnSi纳米线系具有简单立方（B20）晶体结构，具有T(c)约为30 K的流动磁性质。采用光刻技术和纳米操纵装置制备了单MnSi纳米线器件，该器件具有良好的欧姆接触。单纳米线器件测量为MnSi纳米线提供了大（20%）的负磁阻和544 microOmegacm的极低电阻率。
We report the synthesis of free-standing MnSi nanowires via a vapor transport method with no catalyst and measurements of their electrical and magnetic properties for the first time. The single-crystalline MnSi nanowire ensemble with a simple cubic (B20) crystal structure shows itinerant helimagnetic properties with a T(c) of about 30 K. A single MnSi nanowire device was fabricated by a new method using photolithography and a nanomanipulator that produces good ohmic contacts. The single-nanowire device measurements provide large (20%) negative magnetoresistance and very low electrical resistivity of 544 microOmegacm for the MnSi nanowire.