Development of ZnSe-based organic-inorganic hybrid UV-APDs array
Development of ZnSe-based organic-inorganic hybrid UV-APDs array
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ZnSe基有机-无机杂化UV-APD阵列的研制
DOI：
10.1002/pssc.201510273
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
and Kunio Ichino
中科院分区：
文献类型：
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作者：
Tomoki Abe;Ryoichi Inoue;Takeru Fujimoto;Kenta Tanaka;Shigeto Uchida;Hirofumi Kasada;Koshi Ando;and Kunio Ichino
最近，我们开发了长寿命的有机（PEDOT:PSS）-无机（ZnSSe）混合雪崩光电二极管（APD）及其阵列。在本文中，我们回顾了有机-无机杂化型 ZnSe 基 UV-APD 阵列的发展。我们使用PEDOT:PSS作为通过喷墨印刷技术形成的紫外透明空穴传输导电聚合物窗口层。我们已成功制造出低暗电流紫外混合APD。混合 APD 器件在 29 V 下表现出极低的 APD 工作电压，并且在雪崩击穿区域表现出 10-11A/mm2 的极低暗电流。混合 APD 还显示出 45 的最大倍增系数和紫外区（~ 300 nm）的高灵敏度~ 3 A/W。使用聚酰亚胺钝化和氮气气氛密封封装建立了稳定的器件运行。我们还演示了 APD 模式下的集成设备操作，光信号串扰非常小，仅为 ‐50 dB。通过面内电子束感应电流 (EBIC) 测量，电流轮廓的尾部确定为 8 μm。 （© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA，魏因海姆）
Recently, we have developed organic (PEDOT:PSS)–inorganic (ZnSSe) hybrid avalanche photodiode (APD) with long life time and its array. In this article, we review the development of the organic–inorganic hybrid‐type ZnSe‐based UV‐APDs array. We used PEDOT:PSS as UV transparent hole‐transport conducting polymer window layers formed by inkjet printing technique. We have successfully fabricated low dark current ultraviolet hybrid APDs. The hybrid APD device has exhibited very low voltage APD operation at 29 V and extremely low dark current of 10‐11A/mm2in the avalanche breakdownregion. The hybrid APD also has shown maximum multiplication factor of 45 and high sensitivity ∼ 3 A/W at the ultraviolet region (∼ 300 nm). A stable device operation is established using polyimide passivation and sealed package with N2atmosphere. We also demonstrated integrated devices operation in APD mode with very small photosignal cross‐talk of ‐50 dB. The tail of current‐profile was determined as 8 μm by using in‐plane electron‐beam induced current (EBIC) measurement. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)