Fabrication and characterization of ReO3-type dielectric films
Fabrication and characterization of ReO3-type dielectric films
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DOI：
10.1039/d0tc00821d
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发表时间：
2020-04
影响因子：
6.4
通讯作者：
M. Kodera;Ayako Taguchi;Takao Shimizu;H. Moriwake;H. Funakubo
中科院分区：
文献类型：
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作者：
M. Kodera;Ayako Taguchi;Takao Shimizu;H. Moriwake;H. Funakubo
采用HF蒸汽氧化法在水热处理过程中合成了ReO3型NbO 2F和TaO 2F薄膜，并研究了它们的介电性能。这是第一次证实，这些ReO3型氟氧化物薄膜可以作为电介质材料，从理论和实验上证明。NbO_2F和TaO_2F薄膜在1 MHz时的介电常数分别为80和60。这种新的ReO3型薄膜家族有希望用于制备可用于改善电子元件的介电材料。此外，我们的研究结果提供了一种新的策略，以提高介电常数，而不降低带隙能量。
ReO3-type NbO2F and TaO2F thin films were synthesized using HF vapor oxidation during hydrothermal treatment and their dielectric properties were investigated. It was confirmed for the first time that these ReO3-type oxyfluoride thin films can function as dielectric materials, as demonstrated both theoretically and experimentally. NbO2F and TaO2F thin films exhibited relatively high dielectric constants of 80 and 60 at 1 MHz, respectively. This new ReO3-type family of films is promising for the preparation of dielectric materials that can be utilized for improving electronic components. Moreover, our results provide a new strategy to improve dielectric constants without reducing bandgap energy.