Radiation Effects in MOS Oxides
Radiation Effects in MOS Oxides
复制标题
DOI：
10.1109/tns.2008.2001040
复制
发表时间：
2008-08-01
影响因子：
1.8
通讯作者：
Ferlet-Cavrois, Veronique
中科院分区：
文献类型：
--
作者：
Schwank, James R.;Shaneyfelt, Marty R.;Ferlet-Cavrois, Veronique
空间环境中的电子设备可能包含多种类型的氧化物和绝缘体。电离辐射可在这些氧化物和绝缘体中引起显著的电荷积累，导致器件退化和故障。空间中的电子和质子可导致辐射诱发的总剂量效应。辐射感应电荷的两种主要类型是氧化物陷阱电荷和界面陷阱电荷。这些电荷会导致大的辐射感应阈值电压偏移和漏电流增加。已经研究的用于替代二氧化硅的两种替代氧化物是氧化铪和再氧化的氮化氧化物（RNO）。对于先进的技术，这可能会采用交替的，在这些绝缘体中的辐射感应电压漂移可以忽略不计。寄生场氧化物和SOI掩埋氧化物中的辐射诱导电荷积累也会导致器件退化和故障。事实上，对于先进的商业技术，IC的总剂量硬度通常由寄生场氧化物和/或SOI掩埋氧化物中的辐射诱导电荷积累所主导。太空中的重离子也可以通过几种不同的机制降解电子器件中的氧化物，包括单次事件栅极破裂，器件寿命缩短和功率MOSFET中的大电压漂移。
Electronic devices in space environments can contain numerous types of oxides and insulators. Ionizing radiation can induce significant charge buildup in these oxides and insulators leading to device degradation and failure. Electrons and protons in space can lead to radiation-induced total-dose effects. The two primary types of radiation-induced charge are oxide-trapped charge and interface-trap charge. These charges can cause large radiation-induced threshold voltage shifts and increases in leakage currents. Two alternate dielectrics that have been investigated for replacing silicon dioxide are hafnium oxides and reoxidized nitrided oxides (RNO). For advanced technologies, which may employ alternate dielectrics, radiation-induced voltage shifts in these insulators may be negligible. Radiation-induced charge buildup in parasitic field oxides and in SOI buried oxides can also lead to device degradation and failure. Indeed, for advanced commercial technologies, the total-dose hardness of ICs is normally dominated by radiation-induced charge buildup in either parasitic field oxides and/or SOI buried oxides. Heavy ions in space can also degrade the oxides in electronic devices through several different mechanisms including single-event gate rupture, reduction in device lifetime, and large voltage shifts in power MOSFETs.