Reduced temperature sensitivity of lasing wavelength in near-1.3 /spl mu/ InAs/GaAs quantum-dot laser with stepped composition strain-reducing layer
Reduced temperature sensitivity of lasing wavelength in near-1.3 /spl mu/ InAs/GaAs quantum-dot laser with stepped composition strain-reducing layer
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DOI：
10.1049/el:20070716
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发表时间：
2007-06
影响因子：
1.1
通讯作者：
H. Liu;T. Badcock;C. Jin;E. Nabavi;K. Groom;M. Hopkinson;D. Mowbray
中科院分区：
文献类型：
--
作者：
H. Liu;T. Badcock;C. Jin;E. Nabavi;K. Groom;M. Hopkinson;D. Mowbray
在1.3微米InAs/GaAs量子点激光器中，采用阶梯形成分的InGaAs应变减缩盖层可以显著降低激光波长的温度敏感性。利用这种技术，在20-130℃的温度范围内，灵敏度从具有标准盖层的激光器的0.48 nm/K降低到新设计的0.11 nm/K
An InGaAs strain-reducing capping layer with a stepped composition is shown to significantly reduce the temperature sensitivity of the lasing wavelength in a 1.3 mum InAs/GaAs quantum-dot laser. With this technique, the sensitivity is reduced from 0.48 nm/K for a laser with standard capping layer to 0.11 nm/K for the new design over the temperature range 20-130degC