Feasibility of InSb Compound Semiconductor as the Substrate of High Energy Resolution, High Counting Rate Detectors
Feasibility of InSb Compound Semiconductor as the Substrate of High Energy Resolution, High Counting Rate Detectors
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InSb化合物半导体作为高能量分辨率、高计数率探测器衬底的可行性
DOI:
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发表时间:
2007
期刊:
影响因子:
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通讯作者:
I. Kanno
中科院分区:
文献类型:
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作者:
菅原慎悦;班目春樹;木村浩;I. Kanno