Controlling xi-Ta4C3-x laminate growth in TaC0.6 ceramic by addition of Cu and its effect on mechanical properties
Controlling xi-Ta4C3-x laminate growth in TaC0.6 ceramic by addition of Cu and its effect on mechanical properties
复制标题
添加 Cu 控制 TaC0.6 陶瓷中 xi-Ta4C3-x 层状生长及其对机械性能的影响
DOI：
10.1016/j.matchemphys.2018.12.093
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发表时间：
2019
影响因子：
4.6
通讯作者：
Wang Yujin
中科院分区：
文献类型：
--
作者：
Shi Faqiang;Liu Limeng;Hou Zhaoping;Geng Guihong;Wang Yujin
Tantalum carbide ceramics with an overall composition of TaC0.6were prepared by hot pressing at 1700 °C for 1 h under 30 MPa pressure with fcc TaC and bcc Ta powder as starting materials. Effects of adding 0–30 mol% Cu on densification, phase formation, microstructural evolution, mechanical properties and electrical conductivity of the obtained composite ceramics were investigated. Full density could be reached at 20 mol% Cu addition and above. Reactions between TaC and Ta resulted in the final phases of hexagonal Ta2C and rhombohedral ζ-Ta4C3-x. Plate-shaped ζ laminate grew in both TaC and Ta2C and consequently had their sizes confined by the parental grains. Addition of 20–30 mol% Cu could significantly grow the intermediate Ta2C grains, hence controlling length of the ζ laminates precipitated in them to form bimodal microstructures consisting of large grains. The 20 mol% Cu composition had a better flexural strength (706 ± 46 MPa) and fracture toughness (9.2 ± 1.7 MPa m1/2). Electrical resistivity at room temperature of the composites decreased with Cu content from 1.03 μΩ m at 0 mol% addition to 0.12 μΩ m at 30 mol% Cu.
