A band-structure model of strained quantum-well wurtzite semiconductors
A band-structure model of strained quantum-well wurtzite semiconductors
复制标题
DOI：
10.1088/0268-1242/12/3/004
复制
发表时间：
1997
影响因子：
1.9
通讯作者：
S L Chuang;C S Chang
中科院分区：
文献类型：
--
作者：
S L Chuang;C S Chang
我们提出了一个用于计算应变量子阱纤锌矿半导体能带结构的理论模型。该理论基于纤锌矿半导体的哈密顿量，并包括了能带边移动的应变效应。我们展示了新的结果，这些结果包括基于有效质量理论，使用有限差分法计算量子阱纤锌矿半导体价电子能带结构时哈密顿量的矩阵元。
We present a theoretical model for calculating the band structures of strained quantum-well wurtzite semiconductors. The theory is based on the Hamiltonian for wurtzite semiconductors and includes the strain effects on the shifts of the band edges. We show new results that include the matrix elements of the Hamiltonian using the finite-difference method for the calculations of the valence electronic band structures of quantum-well wurtzite semiconductors based on the effective-mass theory.