Observation of the linear stark effect in a single acceptor in Si.
Observation of the linear stark effect in a single acceptor in Si.
复制标题
观察 Si 中单个受体的线性斯塔克效应。
作者：
L. Calvet;L. Calvet;R. G. Wheeler;M. Reed
利用低温输运测量研究了金属-半导体接触内建势中单个四重简并杂质的斯塔克分裂。一个模型的开发和用于分析运输作为温度，偏置电压和磁场的函数。我们的数据与硼杂质一致。g因子g_（1/2）= 1.14，g_（3/2）= 1.72，线性斯塔克分裂2 δ = 0.1meV。
The Stark splitting of a single fourfold degenerate impurity located within the built-in potential of a metal-semiconductor contact is investigated using low temperature transport measurements. A model is developed and used to analyze transport as a function of temperature, bias voltage, and magnetic field. Our data is consistent with a boron impurity. We report g factors of g_{1/2}=1.14 and g_{3/2}=1.72 and a linear Stark splitting 2Delta of 0.1 meV.