Study of Discrete Doping-Induced Variability in Junctionless Nanowire MOSFETs Using Dissipative Quantum Transport Simulations
Study of Discrete Doping-Induced Variability in Junctionless Nanowire MOSFETs Using Dissipative Quantum Transport Simulations
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DOI：
10.1109/led.2011.2177634
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发表时间：
2012-01
影响因子：
4.9
通讯作者：
M. Aldegunde;A. Martinez;J. Barker
中科院分区：
文献类型：
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作者：
M. Aldegunde;A. Martinez;J. Barker
采用三维非平衡绿色函数模拟方法研究了离散掺杂对无结栅全包围n型硅纳米线晶体管的影响。所研究的器件具有20 nm长的栅极和4.2 × 4.2和6.2 × 6.2 nm 2的横截面。平均掺杂浓度为1020 cm-3。掺杂剂分布是随机产生的，并以完全原子化的方式建模。声子散射，弹性和非弹性，也包括在模拟中。我们发现，无结纳米线晶体管有一个更高的亚阈值变化比他们的反型模式对应的等效几何形状和掺杂水平。
The impact of discrete doping in junctionless gate all-around n-type silicon nanowire transistors is studied using 3-D nonequilibrium Green's functions simulations. The studied devices have a 20 nm long gate and cross sections of 4.2 × 4.2 and 6.2 × 6.2 nm2. The average doping concentration is 1020 cm-3. The dopant distributions are randomly generated and modeled in a fully atomistic way. Phonon scattering, elastic and inelastic, is also included in the simulations. We show that junctionless nanowire transistors have a much higher subthreshold variability than their inversion mode counterparts for the equivalent geometry and doping level.