Room temperature, single mode emission from two-section coupled cavity InGaAs/AlGaAs/GaAs quantum cascade laser
Room temperature, single mode emission from two-section coupled cavity InGaAs/AlGaAs/GaAs quantum cascade laser
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DOI：
10.1063/1.4932141
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发表时间：
2015-10
影响因子：
3.2
通讯作者：
K. Pierściński;D. Pierścińska;M. Pluska;P. Gutowski;I. Sankowska;P. Karbownik;A. Czerwiński;M. Bugajski
中科院分区：
文献类型：
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作者：
K. Pierściński;D. Pierścińska;M. Pluska;P. Gutowski;I. Sankowska;P. Karbownik;A. Czerwiński;M. Bugajski
本文报道了用聚焦离子束工艺制备的两段耦合腔InGaAs/AlGaAs/GaAs量子级联激光器的室温、单模、脉冲发射。单模发射中心在1059.4 cm−1（9.44 μm）。实现了43 dB的边模抑制比。该激光器在室温下每端面的峰值输出功率为15 mW。在温度调谐范围内观察到稳定的单模发射，其位移速率为0.59nm/K。
Room temperature, single mode, pulsed emission from two-section coupled cavity InGaAs/AlGaAs/GaAs quantum cascade laser fabricated by focused ion beam processing is demonstrated and analyzed. The single mode emission is centered at 1059.4 cm−1 (9.44 μm). A side mode suppression ratio of 43 dB was achieved. The laser exhibits a peak output power of 15 mW per facet at room temperature. The stable, single mode emission is observed within temperature tuning range, exhibiting shift at rate of 0.59 nm/K.