A generalized CMOS-MEMS platform for micromechanical resonators monolithically integrated with circuits
A generalized CMOS-MEMS platform for micromechanical resonators monolithically integrated with circuits
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DOI：
10.1088/0960-1317/21/6/065012
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发表时间：
2011-06-01
影响因子：
2.3
通讯作者：
Li, Sheng-Shian
中科院分区：
文献类型：
--
作者：
Chen, Wen-Chien;Fang, Weileun;Li, Sheng-Shian
一个通用的面向代工厂的CMOS-MEMS平台，非常适合集成微机械谐振器旁边的IC放大器已被开发用于商业多用户的目的，并证明了快速的周转时间只有3个月和各种设计灵活性的谐振器应用。有了这个平台，不同配置的电容转换谐振器单片集成与他们的放大器电路，跨越频率从500 kHz到14.5 MHz，已经实现了谐振器Q值的范围在700和3500之间。该平台具有各种结构材料配置、多维位移、不同机械边界条件布置、谐振器微小支撑、大换能面积、定义明确的锚点以及集成电路制造技术的性能增强扩展等特点，为传感器、定时基准和射频应用提供了多种灵活的设计选项。此外，由该平台制造的金属氧化物复合结构组成的谐振器首次在CMOS-MEMS谐振器中提供了有效的温度补偿方案，显示出比仅由CMOS金属制成的谐振器好六倍的TCf。
A generalized foundry-oriented CMOS-MEMS platform well suited for integrated micromechanical resonators alongside IC amplifiers has been developed for commercial multi-user purpose and demonstrated with a fast turnaround time of only 3 months and a variety of design flexibilities for resonator applications. With this platform, different configurations of capacitively-transduced resonators monolithically integrated with their amplifier circuits, spanning frequencies from 500 kHz to 14.5 MHz, have been realized with resonator Q's ranging between 700 and 3500. This platform, specifically featured with various configurations of structural materials, multi-dimensional displacements, different arrangements of mechanical boundary conditions, tiny supports of resonators, large transduction areas, well-defined anchors and performance enhancement scaling with IC fabrication technology, offers a variety of flexible design options targeted for sensor, timing reference, and RF applications. In addition, resonators consisting of metal-oxide composite structures fabricated by this platform offer an effective temperature compensation scheme for the first time in CMOS-MEMS resonators, showing TCf six times better than that of resonators merely made by CMOS metals.