Performance Enhancement of Silicon Nanowire Memory by Tunnel Oxynitride, Stacked Charge Trap Layer, and Mechanical Strain
Performance Enhancement of Silicon Nanowire Memory by Tunnel Oxynitride, Stacked Charge Trap Layer, and Mechanical Strain
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通过隧道氮氧化物、堆叠电荷陷阱层和机械应变增强硅纳米线存储器的性能
DOI：
10.1109/led.2011.2173789
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发表时间：
2012
影响因子：
4.9
通讯作者：
S. C. Lee
中科院分区：
文献类型：
--
作者：
C. Huang;C. H. Yang;C. Hsueh;J. H. Lee;Y. Chang;S. C. Lee
采用重掺杂硅纳米线（SiNW）制造由 AlON 隧道层和 HfO2/HfAlO 电荷陷阱双层组成的存储器件，在编程/擦除阶段操作时表现出 4.6 V 的大存储窗口，即 +12 V 100 μs 和 -12 V 10 ms，以及优异的 70% 外推十年数据保留率和良好的耐久性105 个周期。还研究了应变对 SiNW 存储特性的影响。结果表明，拉伸应变增加了程序窗口，压缩应变改善了数据保留。潜在的机制归因于 AlON 隧道层中氮的结合。
Heavily doped silicon nanowires (SiNWs) are adopted to fabricate a memory device composed of an AlON tunnel layer and a HfO2/HfAlO charge trap bilayer, which exhibits a large memory window of 4.6 V when operated in the program/erase phases, i.e., +12 V for 100 μs and -12 V for 10 ms, along with excellent 70% extrapolated ten-year data retention and good endurance up to 105 cycles. Strain effects on SiNW memory characteristics have also been investigated. It is demonstrated that the tensile strain increases the program window and the compressive strain improves the data retention. The underlying mechanism is attributed to the incorporation of nitrogen in the AlON tunnel layer.