Electric-field-driven nuclear spin control using diluted magnetic semiconductors
Electric-field-driven nuclear spin control using diluted magnetic semiconductors
复制标题
DOI：
10.1063/1.2825423
复制
发表时间：
2007-12
影响因子：
4
通讯作者：
M. Ogura;H. Akai
中科院分区：
文献类型：
--
作者：
M. Ogura;H. Akai
我们提出了一种利用稀磁半导体异质结构进行电场控制核磁共振（NMR）的技术。用第一性原理电子结构方法计算了偏压对（In，Mn，As）As闪烁AlSb体系NMR的影响。计算表明，反位As处的超精细场对外电场非常敏感。在以核自旋为量子比特的量子计算机中，这种技术可以用来控制核自旋。
We propose a technique for electric-field-controlled nuclear magnetic resonance (NMR) using a heterostructure constructed from diluted magnetic semiconductors. The effect on NMR of a bias voltage on an (In,Mn,As)As∕AlSb system is calculated using first-principles electronic structure methods. The calculations show that the hyperfine field at the antisite As is very sensitive to an external electric field. This technique can be used to control nuclear spins in quantum computer that uses nuclear spins as its quantum bits.