Charge trapping-detrapping induced resistive switching in Ba0.7Sr0.3TiO3
Charge trapping-detrapping induced resistive switching in Ba0.7Sr0.3TiO3
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DOI：
10.1063/1.4754150
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发表时间：
2012-09
期刊：
影响因子：
1.6
通讯作者：
X. Zou;H. G. Ong;L. You;Weigang Chen;H. Ding;H. Funakubo;Lang Chen;Junling Wang
中科院分区：
文献类型：
--
作者：
X. Zou;H. G. Ong;L. You;Weigang Chen;H. Ding;H. Funakubo;Lang Chen;Junling Wang
由于其在非易失性存储器中的潜在应用，人们对许多过渡金属氧化物中观察到的阻性开关现象进行了深入的研究。为了阐明阻性开关的基本机制，平面器件可以提供传统垂直夹层结构中无法获取的信息。本文报道了在铂/Ba0.7Sr0.3TiO_3/铂平面器件中观察到的电阻开关行为。利用原位扫描开尔文探针显微镜，我们证明了铂/Ba0.7Sr0.3TiO_3界面附近的电荷俘获/脱陷调制了肖特基势垒，导致了观察到的电阻开关。这一发现对于理解氧化物材料中的阻性转换具有重要的意义。
Intensive research has been devoted to the resistive switching phenomena observed in many transitional metal oxides because of its potential for non-volatile memory application. To clarify the underlying mechanism of resistive switching, a planar device can provide information that is not accessible in conventional vertical sandwich structures. Here we report the observation of resistive switching behavior in a Pt/Ba0.7Sr0.3TiO3/Pt planar device. Using in-situ scanning Kelvin probe microscopy, we demonstrate that charge trapping/detrapping around the Pt/Ba0.7Sr0.3TiO3 interface modulates the Schottky barrier, resulting in the observed resistive switching. The findings are valuable for the understanding of resistive switching in oxide materials.