Carbon nanotube growth from semiconductor nanoparticles
Carbon nanotube growth from semiconductor nanoparticles
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DOI：
10.1021/nl0708011
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发表时间：
2007-08-01
期刊：
影响因子：
10.8
通讯作者：
Homma, Yoshikazu
中科院分区：
文献类型：
--
作者：
Takagi, Daisuke;Hibino, Hiroki;Homma, Yoshikazu
纳米金属催化剂对于化学气相沉积（CVD）合成碳纳米管（CNT）来说是不可或缺的。我们表明，即使是 SiC、Ge 和 Si 的半导体纳米颗粒也可以在乙醇 CVD 中产生单壁和双壁 CNT。这意味着纳米尺寸结构可能充当形成由五元环和六元环组成的碳纳米管帽的模板。为帽形成提供模板是催化剂的重要作用。
Nanoscale metal catalysts have been indispensable for carbon nanotube (CNT) synthesis by chemical vapor deposition (CVD). We show that even semiconductor nanoparicles of SiC, Ge, and Si produce single-walled and double-walled CNTs in CVD with ethanol. This implies that nanosize structures might act as a template for the formation of CNT caps composed of five- and six-membered rings. Providing a template for cap formation is the essential role of the catalysts.