Composition and Properties Control Growth of High-Quality GaOxNy Film by One-Step Plasma-Enhanced Atomic Layer Deposition
Composition and Properties Control Growth of High-Quality GaOxNy Film by One-Step Plasma-Enhanced Atomic Layer Deposition
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通过一步等离子体增强原子层沉积控制高质量 GaOxNy 薄膜的成分和性能生长
DOI：
10.1021/acs.chemmater.9b02061
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发表时间：
2019
影响因子：
8.6
通讯作者：
David Wei Zhang
中科院分区：
文献类型：
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作者：
Hong-Ping Ma;Xiao-Xi Li;Jia-He Yang;Peihong Cheng;Wei Huang;Jingtao Zhu;Tien-Chien Jen;Qixin Guo;Hong-Liang Lu;David Wei Zhang
本研究为等离子体增强原子层沉积（ALD）制备高质量GaOxNy薄膜提供了一种新的方法。为了获得均匀的氮和氧组成，将O-2和NH3同时引入ALD室中。结果表明，通过调节O-2：NH3的比例，可以精确地控制GaOxNy薄膜的生长速率、组成和光学性质。随着O-2比的增加，能带隙从3.46调整到4.78 eV。X射线光电子能谱分析表明，所制备的GaOxNy薄膜中存在Ga-O、Ga-N和N-Ga-O键。通过透射电子显微镜表征，GaOxNy薄膜的表面、界面和结构与GaN和Ga2 O3薄膜不同。根据这些发现，提出了一种可能的生长机制。在这项研究中沉积的所有GaOxNy薄膜的能带结构，从价带谱的详细分析。重要的是，发现GaOxNy比GaN和Ga2O3表现出更低的漏电流和更高的击穿电压。这些研究结果为该材料在光电探测、光电化学水裂解、高压器件等方面的应用提供了基础。
This study provided a novel method for depositing high-quality GaOxNy film by plasma-enhanced atomic layer deposition (ALD). To obtain a uniform nitrogen and oxygen composition, O-2 and NH3 were led into the ALD chamber at the same time. It was found that the growth rate, composition, and optical properties of the GaOxNy film could be precisely controlled by adjusting the O-2:NH3 ratio. The energy band gap was well tuned from 3.46 to 4.78 eV with increased O-2 ratios. The detailed analysis of the X-ray photoelectron spectra proved the existence of Ga-O, Ga-N, and N-Ga-O bonds in prepared GaOxNy film. The surface, interface, and construction of the GaOxNy films were different with GaN and Ga2O3 films through transmission electron microscope characterization. Then a possible growth mechanism was demonstrated based on these findings. The energy band structure of all GaOxNy films deposited in this study was obtained from a detailed analysis of the valence band spectra. Importantly, the GaOxNy was found to exhibit lower leakage current and higher breakdown voltage than both GaN and Ga2O3. These findings offered a foundation and proved this material will present brilliant application prospects in photodetection, photoelectrochemical water splitting, and high-voltage devices.