Solution-Based Synthesis of Sulvanite Cu3TaS4 and Cu3TaSe4 Nanocrystals

Solution-Based Synthesis of Sulvanite Cu3TaS4 and Cu3TaSe4 Nanocrystals
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DOI:
10.3390/cryst11010051
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发表时间:
2021-01-01
期刊:
影响因子:
2.7
通讯作者:
Radu, Daniela R.
Radu, Daniela R.
中科院分区:
材料科学3区
文献类型:
--
作者:
Liu, Mimi;Lai, Cheng-Yu;Radu, Daniela R.

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亚硫酸盐具有母体式Cu(3)MCh(4)。金属M属于第5族,Ch是硫属元素。预测钽亚硫酸盐Cu 3 TaS 4和Cu 3 TaSe 4具有宽带隙和p型导电性,并在光电应用中显示出前景。它们作为p型透明导体或用于可见光水分解的高效光催化剂的潜力是探索这些材料的纳米级形式的有价值的激励,朝向自下而上的处理机会。本文报道的是第一个合成的纳米级的Cu 3 TaS 4和Cu 3 TaSe 4亚硫酸盐,它保留了母立方晶体结构,但显示在纳米级的形态是依赖于反应条件。这两种基于溶液的方法合成的钽S和Se亚硫酸盐的结果在Cu 3 TaS 4或Cu 3 TaSe 4纳米晶体(NC)与棱柱形态,或者,在Cu 3 TaSe 4的情况下,可能会导致核-壳球形纳米结构。Cu 3 TaS 4和Cu 3 TaSe 4纳米粒子在紫外-可见光区有很好的吸收,而Cu 3 TaSe 4核壳纳米粒子不仅在紫外-可见光区而且在近红外区都有很宽的吸收带。Cu 3 TaS 4和Cu 3 TaSe 4的光致发光测量显示光学带隙分别为2.54和2.32 eV,与在体测得的值一致。此外,Cu 3 TaS 4纳米颗粒的电流-电压(I-V)曲线证明了其导电性。
Sulvanites have the parent formula Cu(3)MCh(4). The metal M belongs to group 5 and Ch is a chalcogen. The tantalum sulvanites Cu3TaS4 and Cu3TaSe4 are predicted to have wide band gaps and p-type conductivity and show promise in optoelectronic applications. Their potential as p-type transparent conductors or efficient photocatalysts for visible-light water splitting is a valuable incentive to explore these materials in their nanoscale form, toward bottom-up processing opportunities. Reported herein are the first syntheses of nanosized Cu3TaS4 and Cu3TaSe4 sulvanites, which preserve the parent cubic crystal structure but show that morphology at the nanoscale is dependent of the reaction conditions. The two solution-based methods for synthesizing the tantalum S and Se sulvanites result in Cu3TaS4 or Cu3TaSe4 nanocrystals (NCs) with prismatic morphology, or, in the case of Cu3TaSe4, could lead to core-shell spherical nanostructures. The Cu3TaS4 NCs and Cu3TaSe4 NCs have good absorption in the UV-Vis region, while the Cu3TaSe4 core-shell NCs possess broad absorption bands not only in the UV-Vis but also in the near-infrared region. Photoluminescence measurements of Cu3TaS4 and Cu3TaSe4 reveal optical bandgaps of 2.54 and 2.32 eV, respectively, consistent with the values measured in bulk. Additionally, the current-voltage (I-V) curve of Cu3TaS4 NCs proves its electrical conductivity.