An interdigitated GaN MIS-HEMT/SBD normally-off power switching device with low ON-resistance and low reverse conduction loss
An interdigitated GaN MIS-HEMT/SBD normally-off power switching device with low ON-resistance and low reverse conduction loss
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DOI：
10.1109/iedm.2017.8268456
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发表时间：
2017-12
期刊：
影响因子：
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通讯作者：
Jiacheng Lei;Jin Wei;Gaofei Tang;Qingkai Qian;M. Hua;Zhaofu Zhang;Zheyang Zheng;K. J. Chen
中科院分区：
文献类型：
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作者：
Jiacheng Lei;Jin Wei;Gaofei Tang;Qingkai Qian;M. Hua;Zhaofu Zhang;Zheyang Zheng;K. J. Chen
采用芯片面积效率高的器件结构设计，实现了具有低损耗反向导通能力的三端常关GaN开关器件。该器件采用叉指型常关型MIS-HEMT和高性能嵌入式反平行肖特基势垒二极管（SBD）沿着栅极宽度方向，晶体管和二极管部分共享公共欧姆接触和接入区。当MIS-HEMT/SBD宽度比为2：1时，器件的阈值电压（Vth）为1.8 V，正向导通电阻（罗恩）为12.1 Ω·mm，关态漏电流（VDS = 200 V）为18 nA/mm，关态击穿电压（BV）为698 V。
A three-terminal normally-off GaN switching device with highly desired low-loss reverse conduction capability was demonstrated using a chip-area-efficient device structure design. This device features interdigitated normally-off MIS-HEMT and high-performance embedded anti-parallel Schottky barrier diode (SBD) along the gate width direction, with the transistor and diode sections sharing common ohmic contacts and access regions. The device with a MIS-HEMT/SBD width ratio of 2:1 exhibits a threshold voltage (Vth) of ∼1.8 V, a forward ON-resistance (RON) of 12.1 Q-mm, an off-state leakage current of 18 nA/mm (VDS = 200 V) and an off-state breakdown voltage (BV) of 698 V. The reverse conduction turn-on voltage (VR-T) is 0.6 V even at a negative gate bias.