Revealing two-stage phase transition process in defective KTaO3 under inelastic interactions
Revealing two-stage phase transition process in defective KTaO3 under inelastic interactions
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DOI：
10.1016/j.scriptamat.2022.115032
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发表时间：
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影响因子：
6
通讯作者：
D. Iancu;E. Zarkadoula;M. Mihai;C. Burducea;I. Burducea;M. Straticiuc;Y. Zhang;W. J. Weber;G. Velişa
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文献类型：
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作者：
D. Iancu;E. Zarkadoula;M. Mihai;C. Burducea;I. Burducea;M. Straticiuc;Y. Zhang;W. J. Weber;G. Velişa
用5 MeV的C、7 MeV的Si和12 MeV的O离子在300 K下辐照预损伤的KTaO 3单晶，研究了离子与缺陷KTaO 3的相互作用.通过对KTaO 3中这些过程的研究，结果表明，当损伤前分数无序能级为0.3，非弹性电子能量损失Se ≥ 4.65 keV/nm（7 MeV Si离子）时，Se与缺陷的协同作用使非晶离子径迹产生。在较低的Se值下（5 MeV C和12 MeV O），在10 ions/nm ~ 2的离子注量下，在一个深度区域上观察到无序度的轻微增加，这可能是由于预先存在的间隙或无定形团簇的溶解;然而，随着离子注量进一步增加，从辐照诱导的无序产生到电离诱导的损伤恢复过程的转变，以前在KTaO 3中没有报道，被观察到。
The interactions of ions with defective KTaO3has been studied by irradiating pre-damaged single crystal KTaO3with 5 MeV C, 7 MeV Si and 12 MeV O ions at 300 K. By exploring these processes in KTaO3, the results show that, for a pre-damaged fractional disorder level of 0.3 and inelastic electronic energy loss, Se, ≥ 4.65 keV/nm (7 MeV Si ions), the synergistic interaction of Sewith defects enables amorphous ion track creation. At lower values of Se(5 MeV C and 12 MeV O), minor increases in disorder are observed initially over a region of depth at an ion fluence of 10 ions/nm2, which may be due to dissolution of pre-existing interstitial or amorphous clusters; however, with further increase in ion fluence, a transition from irradiation-induced disorder production to ionization-induced damage recovery processes, not previously reported in KTaO3, is observed.