Antiferroelectricity in lanthanum doped zirconia without metallic capping layers and post-deposition/-metallization anneals
Antiferroelectricity in lanthanum doped zirconia without metallic capping layers and post-deposition/-metallization anneals
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DOI：
10.1063/1.5037185
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发表时间：
2018-05
影响因子：
4
通讯作者：
Z. Wang;Anthony A. Gaskell;M. Dopita;D. Kriegner;Nujhat Tasneem;Jerry Mack;N. Mukherjee;Z. Karim;A. Khan
中科院分区：
文献类型：
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作者：
Z. Wang;Anthony A. Gaskell;M. Dopita;D. Kriegner;Nujhat Tasneem;Jerry Mack;N. Mukherjee;Z. Karim;A. Khan
报道了La掺杂/合金化对ZrO2反铁电(AFE)性能的影响。从纯→开始，La掺杂量的增加导致AFE双磁滞回线变窄，AFE铁电转变的临界电压/电场增大。在La含量较高时，掺杂/合金化的ZrO2的极化-电压特性类似于非线性介质的极化-电压特性，没有明显的AFE型滞后。X射线衍射仪分析表明，La含量的增加，在保持非极性母体AFE、四方P42/NMC相不变的情况下，导致四方相和(纳米)晶尺寸减小，晶胞体积增大。此外，在沉积的薄膜中获得了反铁电行为，而不需要任何覆盖金属层和后沉积/金属化退火，由于我们的特殊原子层沉积系统配置在生长过程中结晶并稳定了AFE四方相。我们报道了La掺杂/合金化对ZrO2反铁电(AFE)性能的影响。从纯→开始，La掺杂量的增加导致AFE双磁滞回线变窄，AFE铁电转变的临界电压/电场增大。在La含量较高时，掺杂/合金化的ZrO2的极化-电压特性类似于非线性介质的极化-电压特性，没有明显的AFE型滞后。X射线衍射仪分析表明，La含量的增加，在保持非极性母体AFE、四方P42/NMC相不变的情况下，导致四方相和(纳米)晶尺寸减小，晶胞体积增大。此外，在沉积的薄膜中获得了反铁电行为，而不需要任何覆盖金属层和沉积/金属化后的退火热处理，由于我们独特的原子层沉积系统配置使AFE四方相在沉积过程中结晶和稳定。
We report the effects of lanthanum doping/alloying on antiferroelectric (AFE) properties of ZrO2. Starting with pure ZrO2, an increase in La doping leads to the narrowing of the AFE double hysteresis loops and an increase in the critical voltage/electric field for AFE → ferroelectric transition. At higher La contents, the polarization-voltage characteristics of doped/alloyed ZrO2 resemble that of a non-linear dielectric without any discernible AFE-type hysteresis. X-ray diffraction based analysis indicates that the increased La content while preserving the non-polar, parent AFE, tetragonal P42/nmc phase leads to a decrease in tetragonality and the (nano-)crystallite size and an increase in the unit cell volume. Furthermore, antiferroelectric behavior is obtained in the as-deposited thin films without requiring any capping metallic layers and post-deposition/-metallization anneals due to which our specific atomic layer deposition system configuration crystallizes and stabilizes the AFE tetragonal phase during growth.We report the effects of lanthanum doping/alloying on antiferroelectric (AFE) properties of ZrO2. Starting with pure ZrO2, an increase in La doping leads to the narrowing of the AFE double hysteresis loops and an increase in the critical voltage/electric field for AFE → ferroelectric transition. At higher La contents, the polarization-voltage characteristics of doped/alloyed ZrO2 resemble that of a non-linear dielectric without any discernible AFE-type hysteresis. X-ray diffraction based analysis indicates that the increased La content while preserving the non-polar, parent AFE, tetragonal P42/nmc phase leads to a decrease in tetragonality and the (nano-)crystallite size and an increase in the unit cell volume. Furthermore, antiferroelectric behavior is obtained in the as-deposited thin films without requiring any capping metallic layers and post-deposition/-metallization anneals due to which our specific atomic layer deposition system configuration crystallizes and stabilizes the AFE tetragonal phase dur...