Scaling trends and performance evaluation of 2-dimensional polarity-controllable FETs.
Scaling trends and performance evaluation of 2-dimensional polarity-controllable FETs.
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DOI：
10.1038/srep45556
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发表时间：
2017-03-30
影响因子：
4.6
通讯作者：
De Micheli G
中科院分区：
文献类型：
--
作者：
Resta GV;Agarwal T;Lin D;Radu IP;Catthoor F;Gaillardon PE;De Micheli G
过渡金属-二硫族的二维半导体材料，如MoS2和WSe2，在过去几年中得到了广泛的研究，被认为是下一代电子器件的可行候选材料。在本文中，我们首次研究了用未掺杂的单层和双层二维材料实现的极性可控器件的缩放趋势和性能。利用弹道自一致量子模拟表明，使用合适的通道材料，这种极性可控技术可以缩小到5 nm栅极长度，同时显示出与单极物理掺杂二维电子器件相当的性能。
Two-dimensional semiconducting materials of the transition-metal-dichalcogenide family, such as MoS2 and WSe2, have been intensively investigated in the past few years, and are considered as viable candidates for next-generation electronic devices. In this paper, for the first time, we study scaling trends and evaluate the performances of polarity-controllable devices realized with undoped mono- and bi-layer 2D materials. Using ballistic self-consistent quantum simulations, it is shown that, with the suitable channel material, such polarity-controllable technology can scale down to 5 nm gate lengths, while showing performances comparable to the ones of unipolar, physically-doped 2D electronic devices.