Analytic model of I-V Characteristics of 4H-SiC MESFETs based on multiparameter mobility model
Analytic model of I-V Characteristics of 4H-SiC MESFETs based on multiparameter mobility model
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DOI：
10.1109/ted.2004.829859
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发表时间：
2004-06
影响因子：
3.1
通讯作者：
Hongliang Lv;Yimen Zhang;Yuming Zhang;Lin-an Yang
中科院分区：
文献类型：
--
作者：
Hongliang Lv;Yimen Zhang;Yuming Zhang;Lin-an Yang
建立了4H-SiC金属半导体场效应晶体管（mesfet）中电子输运行为和输出电流-电压（I-V）特性的物理分析模型。在该模型中，电子迁移率作为电场的函数和速度-场关系采用了不同的解析表达式。与经验的三参数迁移率模型相比，本文提出的多参数迁移率模型较好地再现了由蒙特卡罗（MC）计算得到的漂移速度场特征，因而相对更为真实。因此，所得的I-V特性与实验数据非常吻合。
A physical analytic model is developed for behavior of electron transport, and for the output current-voltage (I-V ) characteristics in 4H-SiC metal-semiconductor field-effect transistors (MESFETs). In this model, different analytical expressions are used for the electron mobility as a function of electric field and for the velocity-field relationship. Compared with the empirical three-parameter model, the multiparameter mobility model proposed in this paper is comparatively more realistic, since it better reproduces the drift velocity-field characteristics obtained by Monte Carlo (MC) calculations. Thus, the resulting I-V characteristics are in excellent agreement with experimental data.