Two- and multi-terminal CMOS/BiCMOS Si LED’s
Two- and multi-terminal CMOS/BiCMOS Si LED’s
复制标题
DOI：
10.1016/j.optmat.2004.08.063
复制
发表时间：
2005-02
影响因子：
3.9
通讯作者：
M. Plessis;H. Aharoni;L. Snyman
中科院分区：
文献类型：
--
作者：
M. Plessis;H. Aharoni;L. Snyman
硅是一种间接带隙材料，但从反向偏置的pn结观察到光发射。尽管量子效率很低，但在全硅光电集成电路(OIC)中使用这些器件可能仍然是有利的。本文介绍了低压场发射BiCMOS和双端子和多端子CMOS型硅LED的最新研究成果。给出了雪崩和低压场发射LED性能之间的差异。结果表明，与雪崩器件在所有电流水平下的线性行为相比，低电压器件在低电流水平下表现出平方规律的光强与反向电流的非线性关系，而在高电流水平下呈现线性依赖关系。研究了场发射器件的详细光谱特性，结果表明，在工作的非线性区域，发射光谱的形状发生了变化，在较低的电流水平下，短波产生量减少。还讨论了双极结晶体管(BJT)多端子器件，给出了这些器件的平方律特性。
Silicon is an indirect bandgap material, but light emission is observed from reverse biased pn junctions. Even though the quantum efficiency is low, it may still be advantageous to use these devices in all-silicon optoelectronic integrated circuits (OICs). In this paper new research results with regard to low-voltage field emission BiCMOS and CMOS two- and multi-terminal Si LEDs are presented. The differences observed between avalanche and low-voltage field emission LED performance are presented. It is shown that the low-voltage devices exhibit a square-law light intensity vs. reverse current non-linearity at low-current levels, but a linear dependency at higher currents, compared to the linear behaviour of avalanche devices at all current levels. The detail spectral characteristics of the field emission devices are investigated, showing that in the non-linear region of operation, the shape of the emitted spectrum changes, with reduced short wavelength generation at lower current levels. Bipolar junction transistor (BJT) multi-terminal devices are also discussed, and the square-law behaviour of these devices is presented.