Organic Thin-Film Transistors with Short Channel Length Fabricated by Reverse Offset Printing
Organic Thin-Film Transistors with Short Channel Length Fabricated by Reverse Offset Printing
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DOI：
10.1149/1.3591435
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发表时间：
2011-01-01
影响因子：
--
通讯作者：
Koo, Jae Bon
中科院分区：
文献类型：
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作者：
Kim, Minseok;You, In-Kyu;Koo, Jae Bon
我们报告的有机薄膜晶体管（OTFT）与反向偏移印刷银金属源/漏（S/D）电极图案的制造。印刷电极的通道长度小于5 μ m，电阻率为3 × 10 - 6 Ω cm。OTFT由区域规则的聚（3-己基噻吩）作为半导体和聚（甲基丙烯酸甲酯）作为栅极绝缘体制成。对沟道长度为5 μ m的顶栅OTFT的传输特性和输出特性进行了研究。在这里，我们详细讨论了反向胶印遇到的技术挑战和故障模式。(C)2011年电化学学会。[DOI：10.1149/1.3591435]保留所有权利。
We report on the fabrication of organic thin-film transistors (OTFTs) with a reverse-offset-printed Ag metal source/drain (S/D) electrode pattern. The printed electrodes had a channel length of less than 5 mu m and resistivity of 3 x 10(-6) Omega cm. The OTFTs were fabricated from regioregular poly(3-hexylthiophene) as the semiconductor and poly(methyl methacrylate) as the gate insulator. The transfer and output characteristics of a top-gate OTFT with a channel length of 5 mu m were evaluated. Here we discuss in detail the technological challenges encountered with reverse offset printing and the failure modes. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3591435] All rights reserved.