Study of reactive‐ion‐etched silicon by a novel ultrashallow depth profiling technique
Study of reactive‐ion‐etched silicon by a novel ultrashallow depth profiling technique
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通过新型超浅深度分析技术研究反应离子蚀刻硅
DOI：
10.1063/1.111661
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发表时间：
1994
影响因子：
4
通讯作者：
M. King
中科院分区：
文献类型：
--
作者：
W. Chang;L. Huang;W. Lau;T. Abraham;M. King
在CHF3/O2等离子体中反应离子刻蚀处理过的硅，结合臭氧氧化和随后的HF刻蚀进行了纳米深度轮廓的X射线光电子能谱和表面电荷谱表征。结果表明，残余损伤主要由2 nm费米能级钉扎处的缺陷硅、0.5 nm主要被碳化硅污染的硅、1 nm的硅化合物(氟化物、氧化物和碳化物)和5 nm的氟碳组成。在移除这一受损区域后，费米能级变得不再固定。
Silicon treated with reactive ion etching in a CHF3/O2 plasma has been characterized by x‐ray photoelectron spectroscopy and surface charging spectroscopy, in conjunction with ozone oxidation and subsequent HF‐etching for nanodepth profiling. It was found that the residual damage mainly consisted of, from the bulk to surface, 2 nm of defective silicon where the Fermi level was pinned, 0.5 nm of silicon mainly contaminated by silicon carbide, 1 nm of silicon compounds (fluorides, oxides, and carbide), and 5 nm of fluorocarbon. After the removal of this damaged region, the Fermi level became unpinned.