Electrodeposition of Semiconductors
Electrodeposition of Semiconductors
复制标题
DOI:
10.1002/9780470602638.ch14
复制
发表时间:
2011-02
期刊:
影响因子:
--
通讯作者:
T. Schlesinger;K. Rajeshwar;N. Tacconi
中科院分区:
文献类型:
--
作者:
T. Schlesinger;K. Rajeshwar;N. Tacconi
The electrodeposition of semiconductors has been investigated in detail and demonstrated by a large number of workers over many years. This effort is primarily motivated by the fact that electrodeposition is a relatively simple and inexpensive deposition technology that may be scaled up easily. In general, the films deposited by this method do not possess the crystalline perfection or low levels of electrically active impurities of single-crystal epitaxial films deposited by techniques such as molecular beam epitaxy or chemical vapor deposition. Nonetheless, in applications where large areas of semiconductors are required, such as photovoltaic power generation or corrosion protection as opposed to integrated circuit fabrication, the low cost and comparatively low material demands make this deposition technology attractive in terms of ultimate commercialization. In addition, for application in solar cells electrodeposition allows one to easily alter both the bandgap and lattice constant by composition modulation through the control of growth parameters such as applied potential, pH, and temperature of the bath. Thus, it is at least in principle possible to easily grow large areas of tandem cells designed for the most efficient conversion of the solar spectrum. Typical arrangements for electrolytic cells as well as the fundamental electrochemistry and thermodynamics associated with the deposition process are discussed in detail by Paunovic and Schlesinger [1]. Since a large number of semiconductors have been electrodeposited with varying degrees of success, this chapter will focus on the historical development of what has been accomplished in the area of the deposition of semiconductor layers. An attempt is made to indicate the state of the art in each instance. Short summaries as well as the particulars of some of the methods used and an extensive list of references to the literature are provided.