Analysis and Classification of Degradation Phenomena in Polycrystalline-Silicon Thin Film Transistors Fabricated by a Low-Temperature Process Using Emission Light Microscopy
Analysis and Classification of Degradation Phenomena in Polycrystalline-Silicon Thin Film Transistors Fabricated by a Low-Temperature Process Using Emission Light Microscopy
复制标题
使用发射光学显微镜对低温工艺制造的多晶硅薄膜晶体管的退化现象进行分析和分类
DOI：
10.1143/jjap.42.1168
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发表时间：
2003
影响因子：
1.5
通讯作者：
T. Shimoda
中科院分区：
文献类型：
--
作者：
S. Inoue;M. Kimura;T. Shimoda
研究了在425°C以下低温工艺制造的多晶硅薄膜晶体管（低温处理多晶硅TFT）中的退化现象。由自加热和热载流子引起的退化的类型已被分类，并已使用发射光显微镜研究这些退化现象。自热退化被认为起源于金属氧化物半导体（MOS）界面和沟道多晶硅层中Si-H键的断裂和悬挂键的再生。另一方面，热载流子退化被认为是源于MOS界面和TFT漏极附近的沟道多晶硅层的损伤。当栅应力电压等于阈值电压时，由于沟道中漏极附近的电场和电子密度增加，导致最大退化。发射光谱测量的结果证实了在这种应力下产生的高能载流子。
The degradation phenomena in polycrystalline-silicon thin film transistors fabricated by a low-temperature process below 425°C (low-temperature-processed poly-Si TFTs) have been investigated. The types of degradation caused by self-heating and hot carriers have been classified, and these degradation phenomena have been investigated using emission light microscopy. Self-heating degradation is thought to originate in the breaking of Si–H bonds and regeneration of dangling bonds in the metal–oxide–semiconductor (MOS) interface and channel poly-Si layers. On the other hand, hot carrier degradation is considered to originate from the damage of the MOS interface and of the channel poly-Si layer near the drain of TFTs. When the gate stress voltage is equal to the threshold voltage, maximum degradation is induced because both the electric field near the drain in the channel and the electron density increase. Results of emission light spectra measurements confirmed the generation of high-energy carriers under this stress.