Synthesis, structural and electrical characterizations of DySr5Ni2.4Cu0.6O12−δ
Synthesis, structural and electrical characterizations of DySr5Ni2.4Cu0.6O12−δ
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DOI：
10.1016/j.jssc.2011.08.033
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发表时间：
2011-11
影响因子：
3.3
通讯作者：
S. Hamdi;S. Ouni;H. Chaker;J. Rohlíček;R. Hassen
中科院分区：
文献类型：
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作者：
S. Hamdi;S. Ouni;H. Chaker;J. Rohlíček;R. Hassen
用溶胶凝胶法制备了新化合物DySr5Ni2.4Cu0.6O12−δ，并在1473K、1atm的Ar气流中进行了热处理。用X射线衍射仪(X射线衍射仪)进行物相鉴定。实例表明采用基于公差系数计算的K2NiF4型结构。用Rietveld方法进行了X射线衍射分析，发现DySr5Ni2.4Cu0.6O12−δ(Dy0.33Sr1.67Ni0.8Cu0.2O4−δ′)化合物具有四方对称性，空间群为I4/mm(Z=2)。在室温下，晶格参数分别为a=3.7696(5)和c=12.3747(2)；最终的可靠性指标为：Rb=5.219%，χ2=3.47.在294-579K的范围内进行了四个探头的电阻率随温度的测量。在整个温度范围内观察到半导体行为，最大电导率在510K时为0.4Scm−1。
A new compound DySr5Ni2.4Cu0.6O12−δhas been prepared by sol gel method and annealed at 1473K in 1atm of Ar gas flow. The X-ray diffraction (XRD) is used for phase identification. The sample shows to adopt the K2NiF4-type structure based on tolerance factor calculation. XRD analysis using the Rietveld method was carried out and it was found that DySr5Ni2.4Cu0.6O12−δ(Dy0.33Sr1.67Ni0.8Cu0.2O4−δ′) compound crystallizes in tetragonal symmetry with space group I4/mmm (Z=2). The lattice parameters are found to be at room temperature a=3.7696(5)Å and c=12.3747(2)Å. The final reliability indices were: RB=5.219% and χ2=3.47. Four probe electrical resistivity measurements were performed versus temperature in the range 294–579K. A semiconducting behaviour over the whole range of temperature, with a conductivity maximum of 0.4Scm−1is observed at 510K.