Extremely high internal quantum efficiencies from AlGaN/AlN quantum wells emitting in the deep ultraviolet spectral region
Extremely high internal quantum efficiencies from AlGaN/AlN quantum wells emitting in the deep ultraviolet spectral region
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DOI：
10.1063/1.3607306
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发表时间：
2011-07-04
影响因子：
4
通讯作者：
Kawakami, Yoichi
中科院分区：
文献类型：
--
作者：
Banal, Ryan G.;Funato, Mitsuru;Kawakami, Yoichi
采用金属有机物气相外延技术生长了发射波长为247 nm的AlGaN/AlN量子威尔斯阱（QW）。极高的IQE是通过检查源供应序列实现的。通过连续源供应方法制造的量子阱具有更长的发射波长（λ）和更高的IQE相比，通过改进的迁移增强外延（MPEG4）制造的量子阱。MPEG4是一种交替源供应方法，其中NH（3）中断促进Ga蒸发。因此，为了获得相同的λ，MHTR需要比连续方法更低的生长温度，从而损害AlN和AlGaN层的质量以及QW的IQE。(C)2011年美国物理学会。[doi 10.1063/1.3607306]
AlGaN/AlN quantum wells (QWs) emitting at 247 nm grown by metalorganic vapor phase epitaxy. The extremely high IQEs were achieved by examining the source-supply sequence. QWs fabricated by a continuous source-supply method have longer emission wavelengths (lambda) and higher IQEs compared to QWs fabricated by modified migration enhanced epitaxy (MMEE). MMEE is an alternating source-supply method where the NH(3) interruption promotes Ga evaporation. Thus, to obtain the same lambda, MMEE requires a lower growth temperature than the continuous method, compromising the quality of the AlN and AlGaN layers as well as the IQE of QWs. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3607306]