Zn0.9Co0.1O-based diluted magnetic semiconducting thin films
Zn0.9Co0.1O-based diluted magnetic semiconducting thin films
复制标题
DOI：
10.1063/1.1764936
复制
发表时间：
2004-06
影响因子：
4
通讯作者：
S. Ramachandran;A. Tiwari;J. Narayan
中科院分区：
文献类型：
--
作者：
S. Ramachandran;A. Tiwari;J. Narayan
在这里，我们报告的结构，光学和磁性测量的外延Zn0.9Co0.1O薄膜生长在c-平面蓝宝石单晶，在不同的温度（500-650°C），使用脉冲激光沉积的系统研究。在这项工作中的主要重点一直在微观结构与性能的相关性，特别是与磁性和钴离子的命运到替代网站与沉淀物。探讨了室温铁磁性的原因，并令人信服地证明了这是材料的固有特性之一。最重要的是，排除了任何磁性相的纳米团簇的存在。这是通过高分辨率透射电子显微镜，结合电子能量损失谱和STEM-Z（扫描透射电子显微镜-原子序数）对比研究确定的。
Here we report a systematic study of structural, optical, and magnetic measurements on epitaxial Zn0.9Co0.1O films grown on c-plane sapphire single crystal, at various temperatures (500–650°C), using pulsed-laser deposition. The main emphasis in this work has been on the correlation of microstructure with properties, specifically with magnetic properties and the fate of cobalt ions into substitutional sites versus precipitates. The reasons for room-temperature ferromagnetism are explored, and convincingly proved to be one of the inherent properties of the material. Most importantly, the presence of nanoclusters of any magnetic phase was ruled out. This was determined by high-resolution transmission electron microscopy, coupled with electron energy loss spectroscopy and STEM-Z (scanning transmission electron microscopy-atomic number) contrast studies.