Current collapse in high-Al channel AlGaN HFETs
Current collapse in high-Al channel AlGaN HFETs
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DOI：
10.7567/1882-0786/ab24b1
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发表时间：
2019-06
影响因子：
2.3
通讯作者：
Shahab Mollah;M. Gaevski;K. Hussain;A. Mamun;Rich Floyd;Xuhong Hu;M. Chandrashekhar;G. Simin;Asif Khan
中科院分区：
文献类型：
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作者：
Shahab Mollah;M. Gaevski;K. Hussain;A. Mamun;Rich Floyd;Xuhong Hu;M. Chandrashekhar;G. Simin;Asif Khan
我们首次报道了利用短脉冲偏置技术在超宽带隙高al - AlGaN沟道异质结构场效应晶体管（hfet）中进行电流坍缩的研究。我们的研究结果表明，在外加脉冲栅极和漏极电压下，电流崩溃是由源极和栅极漏极区域的电阻增加引起的，而不是由栅极下的沟道引起的。我们还表明，用SiNx钝化高铝通道HFET的通路区域导致电流崩溃的显著减少。
We report the first study of current collapse in ultra-wide bandgap high-Al AlGaN channel heterostructure field-effect transistors (HFETs) using short-pulse biasing. Our results show that, under applied pulsed gate and drain voltages, the current collapse results from increased resistance of the source- gate and gate-drain regions but not from the channel under the gate. We also show that passivation of access regions of the high-Al channel HFET with SiNx results in significant reduction in current collapse.