Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells
Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells
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DOI：
10.1103/physrevmaterials.4.024601
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发表时间：
2020-02
影响因子：
3.4
通讯作者：
I. Fischer;C. Clausen;D. Schwarz;P. Zaumseil;G. Capellini;M. Virgilio;Maria Cecilia da Silva Figueira;S. Birner;S. Koelling;P. Koenraad;Michael R. S. Huang;C. Koch;Torsten Wendav;K. Busch;J. Schulze
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文献类型：
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作者：
I. Fischer;C. Clausen;D. Schwarz;P. Zaumseil;G. Capellini;M. Virgilio;Maria Cecilia da Silva Figueira;S. Birner;S. Koelling;P. Koenraad;Michael R. S. Huang;C. Koch;Torsten Wendav;K. Busch;J. Schulze
虽然锡含量较高的GeSn合金构成了直接的IV族半导体，但它们在硅上的生长仍然具有挑战性。利用分子束外延技术在Ge上沉积少量的纯Sn单分子层，并与Ge一起生长，可以在保持高晶体质量的同时获得高含量的富锡量子阱。在这里，我们以非常高的精度提供关于这类结构的结构和成分信息。基于我们的表征结果，我们从理论上预测了跃迁能，并将它们与光致发光测量的实验结果进行了比较。我们的结果为基于分子束外延生长的富锡量子阱和量子点在电子和光电子器件中的应用奠定了基础。
While GeSn alloys with high Sn content constitute direct group-IV semiconductors, their growth on Si remains challenging. The deposition of a few monolayers of pure Sn on Ge and their overgrowth with Ge using molecular beam epitaxy can be a means of obtaining Sn-rich quantum wells with very high Sn content while maintaining high crystal quality. Here, we provide structural and compositional information on such structures with very high accuracy. Based on our characterization results we theoretically predict transition energies and compare them with experimental results from photoluminescence measurements. Our results constitute the groundwork for tuning the molecular beam epitaxy based growth of Sn-rich quantum wells and dots for applications in electronic and optoelectronic devices.