Joining technology—A challenge for the use of SiC components in HTRs
Joining technology—A challenge for the use of SiC components in HTRs
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DOI:
10.1016/j.nucengdes.2015.12.022
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发表时间:
2016-09
影响因子:
1.7
通讯作者:
M. Herrmann;Peter Meisel;W. Lippmann;A. Hurtado
中科院分区:
文献类型:
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作者:
M. Herrmann;Peter Meisel;W. Lippmann;A. Hurtado